J. Velebir: search on Z-Library

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1

Optimization of low-noise GaAs MESFET's

Fukui, H., DiLorenzo, J.V., Hewitt, B.S., Velebir, J.R., Jr., Cox, H.M., Luther, L.C., Seman, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 493 KB

english, 1980

2

Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads

Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Jr., Oki, A.K., Streit, D.C.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1993

Language:

english

File:

PDF, 763 KB

english, 1993

3

[MTT007 Microwave and Millimeter-Wave Monolithic Circuits - Las Vegas, NV, USA (June 1987)] Microwave and Millimeter-Wave Monolithic Circuits - 44 GHz Monolithic Low Noise Amplifier

Berenz, J., Yen, H.C., Esfandiari, R., Nakano, K., Sato, T., Velebir, J., Ip, K.

Year:

1987

Language:

english

File:

PDF, 329 KB

english, 1987

4

[IEEE GaAs IC Symposium Technical Digest 1992 - Miami Beach, FL, USA (4-7 Oct. 1992)] GaAs IC Symposium Technical Digest 1992 - A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs

Tan, K.L., Liu, P.H., Streit, D.C., Dia, R., Han, A.C., Freudenthal, A., Velebir, J., Stolt, K., Lee, J., Bidenbender, M., Lai, R., Wang, H., Allen, B.

Year:

1992

Language:

english

File:

PDF, 313 KB

english, 1992

5

Complementary HBT push-pull amplifier by selective MBE

Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Oki, A.K., Streit, D.C.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1992

File:

PDF, 202 KB

1992

6

[IEEE GaAs IC Symposium Technical Digest 1992 - Miami Beach, FL, USA (4-7 Oct. 1992)] GaAs IC Symposium Technical Digest 1992 - Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loads

Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Streit, D.C., Oki, A.K.

Year:

1992

Language:

english

File:

PDF, 309 KB

english, 1992

7

Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition

Dupuis, R.D., Campbell, J.C., Velebir, J.R.

Journal:

Electronics Letters

Year:

1986

Language:

english

File:

PDF, 3.63 MB

english, 1986

8

[IEEE 1993 IEEE MTT-S International Microwave Symposium Digest - Atlanta, GA, USA (14-18 June 1993)] 1993 IEEE MTT-S International Microwave Symposium Digest - A monolithic W-band three-stage LNA using 0.1 mu m InAlAs/InGaAs/InP HEMT technology

Wang, H., Lai, R., Chen, T.H., Chow, P.D., Velebir, J., Tan, K.L., Streit, D.C., Liu, P.H., Ponchak, G.

Year:

1993

Language:

english

File:

PDF, 370 KB

english, 1993

9

A high-performance monolithic Q-band InP-based HEMT low-noise amplifier

D. Lo, R. Lai, H. Wang, K. Tan, R. Dia, D. Streit, P. Liu, J. Velebir, B. Allen, J. Berenz

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

10

[IEEE IEEE MTT-S International Microwave Symposium Digest - Long Beach, CA, USA (13-15 June 1989)] IEEE MTT-S International Microwave Symposium Digest - Design and performance of a 94 GHz HEMT mixer

Chow, P.D., Garske, D., Velebir, J., Hsieh, E., Ngan, Y.C., Yen, H.C.

Year:

1989

Language:

english

File:

PDF, 287 KB

english, 1989

11

A novel heterojunction bipolar transistor active feedback design

Kobayashi, K.W., Oki, A.K., Tran, L.T., Velebir, J.R., Streit, D.C.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1994

Language:

english

File:

PDF, 239 KB

english, 1994

12

[IEEE 1992 IEEE Microwave Symposium Digest MTT-S - Albuquerque, NM, USA (1-5 June 1992)] 1992 IEEE Microwave Symposium Digest MTT-S - Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base

Yamada, F.M., Oki, A.K., Streit, D.C., Saito, Y., Umemoto, D.K., Tran, L.T., Bui, S., Velebir, J.R., McIver, G.W.

Year:

1992

Language:

english

File:

PDF, 292 KB

english, 1992

13

High-gain W band pseudomorphic InGaAs power HEMTs

Streit, D.C., Tan, K.L., Dia, R.M., Liu, J.K., Han, A.C., Velebir, J.R., Wang, S.K., Trinh, T.Q., Chow, P.-M.D., Lui, P.H., Yen, H.C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 200 KB

english, 1991

14

Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch

Kobayashi, K.W., Tran, L.T., Bui, S., Velebir, J.R., Oki, A.K., Streit, D.C.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1993

Language:

english

File:

PDF, 293 KB

english, 1993

15

Ultralow-noise W-band pseudomorphic InGaAs HEMT's

Tan, K.L., Dia, R.M., Streit, D.C., Han, A.C., Trinh, T.Q., Velebir, J.R., Liu, P.H., Lin, T., Yen, H.C., Sholley, M., Shaw, L.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 326 KB

english, 1990

16

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

Streit, D.C., Oki, A.K., Umemoto, D.K., Velebir, J.R., Stolt, K.S., Yamada, F.M., Saito, Y., Hafizi, M.E., Bui, S., Tran, L.T.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 256 KB

english, 1991

17

Integrated npn/pnp GaAs/AlGaAs HBTs grown by selective MBE

Umemoto, D.K., Velebir, J.R., Kobayashi, K.W., Oki, A.K., Streit, D.C.

Journal:

Electronics Letters

Year:

1991

Language:

english

File:

PDF, 199 KB

english, 1991

18

High-power V-band pseudomorphic InGaAs HEMT

Tan, K.L., Streit, D.C., Dia, R.M., Wang, S.K., Han, A.C., Chow, P.-M.D., Trinh, T.Q., Liu, P.H., Velebir, J.R., Yeii, H.C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 248 KB

english, 1991

19

[IEEE 15th Annual GaAs IC Symposium - San Jose, CA, USA (10-13 Oct. 1993)] 15th Annual GaAs IC Symposium - InAlAs/InGaAs HBT X-band double-balanced upconverter

Kobayashi, K.W., Tran, L.T., Bui, S., Oki, A.K., Velebir, J.R., Streit, D.C., Rosen, M.

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

20

Beam-Lead plated heat sink GaAs IMPATT: Part I—Performance

DiLorenzo, J.V., Niehaus, W.C., Velebir, J.R., Jr., Iglesias, D.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1975

Language:

english

File:

PDF, 772 KB

english, 1975

21

A monolithically integrated 120-GHz InGaAs/InAlAs/InP HEMT amplifier

Lai, R., Wang, H., Tan, K.L., Streit, D.C., Liu, P.H., Velebir, J., Chen, S., Berenz, J., Pospieszalski, M.W.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1994

Language:

english

File:

PDF, 192 KB

english, 1994

22

InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition

Dupuis, R.D., Velebir, J.R., Campbell, J.C., Qua, G.J.

Journal:

Electronics Letters

Year:

1986

Language:

english

File:

PDF, 382 KB

english, 1986

23

[IEEE IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers - Atlanta, GA, USA (14-15 June 1993)] IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers - InP based HBT millimeter-wave technology and circuit performance to 40 GHz

Kobayashi, K.W., Tran, L.T., Bui, S., Velebir, J., Nguyen, D., Oki, A.K., Streit, D.C.

Year:

1993

Language:

english

File:

PDF, 319 KB

english, 1993

24

Screening for intracranial aneurysms in patients with bicuspid aortic valve

Schievink, W. I., Raissi, S. S., Maya, M. M., Velebir, A.

Journal:

Year:

2010

Language:

english

File:

PDF, 231 KB

english, 2010

25

[IEEE 1993 IEEE MTT-S International Microwave Symposium Digest - Atlanta, GA, USA (14-18 June 1993)] 1993 IEEE MTT-S International Microwave Symposium Digest - Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Pospieszalski, M.W., Lakatosh, W.J., Lai, R., Tan, K.L., Streit, D.C., Liu, P.H., Dia, R.M., Velebir, J.

Year:

1993

Language:

english

File:

PDF, 377 KB

english, 1993

26

[IEEE IEEE International Digest on Microwave Symposium - Dallas, TX, USA (8-10 May 1990)] IEEE International Digest on Microwave Symposium - A 44-GHz HEMT doubler/amplifier chain

Chow, P.D., Hwang, Y., Garske, D., Velebir, J., Yen, H.C.

Year:

1990

File:

PDF, 263 KB

1990

27

Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors

Streit, D.C., Hafizi, M.E., Umemoto, D.K., Velebir, J.R., Tran, L.T., Oki, A.K., Kim, M.E., Wang, S.K., Kim, C.W., Sadwick, L.P., Hwu, R.J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

28

[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Dupuis, R.D., Campbell, J.C., Velebir, J.R.

Year:

1985

Language:

english

File:

PDF, 241 KB

english, 1985

29

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - MBE growth and characterization of lattice-matched and pseudomorphic InGaAs/InAlAs/InP HEMTs

Streit, D.C., Tan, K.L., Liu, P.H., Chow, P.D., Velebir, J.R., Lai, R., Block, T.R., Stolt, K.S., Wojtowicz, M.

Year:

1992

File:

PDF, 125 KB

1992

30

Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

Dupuis, R.D., Velebir, J.R., Campbell, J.C., Qua, G.J.

Journal:

IEEE Electron Device Letters

Year:

1986

Language:

english

File:

PDF, 300 KB

english, 1986

31

[IEEE 15th Annual GaAs IC Symposium - San Jose, CA, USA (10-13 Oct. 1993)] 15th Annual GaAs IC Symposium - Fully functional high speed 4-bit A/D converters using InAlAs/InGaAs HBTs

Tran, L., Southwell, S., Velebir, J., Oki, A., Streit, D., Oyama, B.

Year:

1993

Language:

english

File:

PDF, 271 KB

english, 1993

32

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability

Kwon, Y., Pavlidis, D., Brock, T., Ng, G.I., Tan, K.L., Velebir, J.R., Streit, D.C.

Year:

1993

Language:

english

File:

PDF, 319 KB

english, 1993

33

InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

R.D. Dupuis, J.C. Campbell, J.R. Velebir

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 586 KB

english, 1986

34

Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme

Wang, L. C., Lau, S. S., Hsieh, E. K., Velebir, J. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 569 KB

english, 1989

35

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - InAlAs/InGaAs HBT exponentially graded base doping and graded InGaAlAs emitter-base junction

Tran, L., Streit, D., Kobayashi, K., Velebir, J., Bui, S., Oki, A.

Year:

1992

File:

PDF, 194 KB

1992

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